PSMN1R0-40YSH mosfet equivalent, n-channel mosfet.
* 290 A continuous ID(max)
* Avalanche rated, 100% tested
* NextPower-S3 technology delivers 'superfast switching with soft body-diode recovery'
* Low QRR.
2. Features and benefits
* 290 A continuous ID(max)
* Avalanche rated, 100% tested
* NextPower-S3 technolo.
290 Amp, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56E package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications.
2. Fea.
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