Datasheet Details
| Part number | PSMN1R0-40YSH |
|---|---|
| Manufacturer | Nexperia |
| File Size | 295.15 KB |
| Description | N-channel MOSFET |
| Datasheet |
 PSMN1R0-40YSH Datasheet
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General Description
290 Amp, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56E package using advanced TrenchMOS Superjunction technology.
This product has been designed and qualified for high performance power switching applications.
2.
Key Features
- 290 A continuous ID(max).
- Avalanche rated, 100% tested.
- NextPower-S3 technology delivers 'superfast switching with soft body-diode recovery'.
- Low QRR, QG and QGD for high system efficiency and low EMI designs.
- Schottky-Plus body-diode, gives soft switching without the associated high IDSS leakage.
- Strong linear-mode / SOA rating.
- High reliability LFPAK (Power SO8) package, with copper-clip and solder die attach, qualified to 175 °C.