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PSMN009-100P - N-channel MOSFET

General Description

SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Key Features

  • Low conduction losses due to low on-state resistance.
  • Suitable for high frequency.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PSMN009-100P N-channel TrenchMOS SiliconMAX standard level FET Rev. 4 — 27 December 2011 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits  Low conduction losses due to low on-state resistance  Suitable for high frequency applications due to fast switching characteristics 1.3 Applications  High frequency computer motherboard DC-to-DC convertors  OR-ing applicationss 1.4 Quick reference data Table 1.