PSMN009-100W Datasheet PDF - Philips N-channel TrenchMOS transistor Specs

PSMN009-100W - N-channel TrenchMOS transistor

Datasheet Summary

Description

N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology.

The device has very low on-state resistance.

It is intended for use in dc to dc converters and general purpose switching applications.

Features

’Trench’ technology.
Very low on-state resistance.
Fast switching.
High thermal cycling performance.
Low thermal resistance SYMBOL d QUICK.

Datasheet Details

Part number	PSMN009-100W
Manufacturer	Philips
File Size	28.85 KB
Description	N-channel TrenchMOS transistor
Datasheet	PSMN009-100W Datasheet
Additional preview pages of the PSMN009-100W datasheet.

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Full PDF Text Transcription

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Philips Semiconductors Objective specification TrenchMOS™ transistor PSMN009-100W FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • High thermal cycling performance • Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 100 V ID = 100 A g RDS(ON) ≤ 9 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PSMN009-100W is supplied in the SOT429 (TO247) conventional leaded package.

Published: May 17, 2005 |