PSMN009-100B datasheet, mosfet equivalent, nexperia

Features and benefits

* Low conduction losses due to low on-state resistance
* Suitable for high frequency applications due to fast switching characteristics 1.3 Applications
* H.

Application

only. 1.2 Features and benefits
* Low conduction losses due to low on-state resistance
* Suitable for high fre.

Description

SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

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