PSC1065H-Q datasheet, diode equivalent, nexperia

Features and benefits

* Reduced system costs
* Temperature independent fast and smooth switching performance
* Outstanding figure-of-merit (Qc x VF)
* High IFSM capability
.

Application

6 June 2024 Product data sheet 1. General description Nexperia introduces leading edge Silicon Carbide (SiC) Schottky.

Description

Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin R2P (TO-252-2) Surface-Mounted Device (SMD).

Image gallery