Datasheet4U Logo Datasheet4U.com

PSC1065H-Q - 10A SiC Schottky diode

Description

Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance, low loss, high efficiency power conversion applications.

Features

  • Reduced system costs.
  • Temperature independent fast and smooth switching performance.
  • Outstanding figure-of-merit (Qc x VF).
  • High IFSM capability.
  • High power density.
  • System miniaturization.
  • Reduced EMI.
  • Qualified according to AEC-Q101 and recommended for use in automotive.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PSC126-7iR 6...12 A Switching Regulators Power-One
PSC128-7iR 6...12 A Switching Regulators Power-One
PSC128-7iR Positive Switching Regulators Power-One AG
PSC128-7iR Positive Switching Regulators Melcher AG
PSC129-2 6...12 A Switching Regulators Power-One

Other Datasheets by Nexperia

Part Number Description
PSC1065H 10A SiC Schottky diode
PSC1065B1 10A SiC Schottky diode
PSC1065B1-Q 10A SiC Schottky diode
PSC1065J-Q 650V 10A SiC Schottky diode
PSC1065K 10A SiC Schottky diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PSC1065H-Q 650 V, 10 A SiC Schottky diode in DPAK R2P for automotive applications 6 June 2024 Product data sheet 1. General description Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin R2P (TO-252-2) Surface-Mounted Device (SMD) power plastic package offers temperature independent capacitive turn-off, zero recovery switching behavior combined with an outstanding figure-of-merit (QC x VF). The Merged PiN Schottky (MPS) diode improves the robustness expressed in a high IFSM. 2.
Published: |