PSC1065H Datasheet PDF - nexperia 10A SiC Schottky diode Specs

PSC1065H - 10A SiC Schottky diode

Datasheet Summary

Description

Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance, low loss, high efficiency power conversion applications.

Features

Zero forward and reverse recovery.
Temperature independent fast and smooth switching performance.
Outstanding figure-of-merit (Qc x VF).
High IFSM capability.
High power density.
Reduced system cost.
System miniaturization.
Reduced EMI 3.

Datasheet Details

Part number	PSC1065H
Manufacturer	nexperia
File Size	256.98 KB
Description	10A SiC Schottky diode
Datasheet	PSC1065H Datasheet
Additional preview pages of the PSC1065H datasheet.

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Full PDF Text Transcription

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PSC1065H 650 V, 10 A SiC Schottky diode in DPAK R2P 8 February 2024 Product data sheet 1. General description Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin R2P (TO-252-2) Surface-Mounted Device (SMD) power plastic package offers temperature independent capacitive turn-off, zero recovery switching behavior combined with an outstanding figure-of-merit (QC x VF). The Merged PiN Schottky (MPS) diode improves the robustness expressed in a high IFSM. 2.

Published: Jul 11, 2024 |