PMZ950UPEL
PMZ950UPEL is P-channel MOSFET manufactured by Nexperia.
description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
- Low leakage current
- Trench MOSFET technology
- Leadless ultra small and ultra thin SMD plastic package: 1.0 × 0.6 × 0.48 mm
- Electro Static Discharge (ESD) protection > 1 k V HBM
- Drain-source on-state resistance RDSon = 1.02 Ω
3. Applications
- Relay driver
- High-speed line driver
- High-side load switch
- Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon drain-source on-state resistance
Conditions Tj = 25 °C
VGS = -4.5 V; Tamb = 25 °C
VGS = -4.5 V; ID = -500 m A; Tj = 25 °C
[1]
Min Typ Max Unit
- - -20 V
-8
- 8V
- - -500 m A
- 1.02 1.4 Ω
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.
Nexperia
20 V, P-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information Pin Symbol Description
1 G gate 2 S source 3 D drain
Simplified outline
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