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PMZ950UPEL Datasheet Preview

PMZ950UPEL Datasheet

P-channel MOSFET

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PMZ950UPEL
20 V, P-channel Trench MOSFET
28 June 2016
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
Low leakage current
Trench MOSFET technology
Leadless ultra small and ultra thin SMD plastic package: 1.0 × 0.6 × 0.48 mm
ElectroStatic Discharge (ESD) protection > 1 kV HBM
Drain-source on-state resistance RDSon = 1.02 Ω
3. Applications
Relay driver
High-speed line driver
High-side load switch
Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = -4.5 V; Tamb = 25 °C
VGS = -4.5 V; ID = -500 mA; Tj = 25 °C
[1]
Min Typ Max Unit
- - -20 V
-8 -
8V
- - -500 mA
- 1.02 1.4 Ω
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 1 cm2.




nexperia

PMZ950UPEL Datasheet Preview

PMZ950UPEL Datasheet

P-channel MOSFET

No Preview Available !

Nexperia
PMZ950UPEL
20 V, P-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 G gate
2 S source
3 D drain
Simplified outline
1
3
2
Transparent
top view
DFN1006-3 (SOT883)
Graphic symbol
G
D
Table 3. Ordering information
Type number
Package
Name
PMZ950UPEL
DFN1006-3
Description
DFN1006-3: leadless ultra small plastic package; 3
solder lands
S
017aaa259
Version
SOT883
6. Marking
Table 4. Marking codes
Type number
PMZ950UPEL
Marking code
L2
PMZ950UPEL
Product data sheet
All information provided in this document is subject to legal disclaimers.
28 June 2016
© Nexperia B.V. 2017. All rights reserved
2 / 15


Part Number PMZ950UPEL
Description P-channel MOSFET
Maker nexperia
Total Page 15 Pages
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