Datasheet4U Logo Datasheet4U.com

PMZ950UPE - P-channel MOSFET

Description

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Features

  • Trench MOSFET technology.
  • Leadless ultra small and ultra thin SMD plastic package: 1.0 × 0.6 × 0.48 mm.
  • ElectroStatic Discharge (ESD) protection > 1 kV HBM.
  • Drain-source on-state resistance RDSon = 1.02 Ω 3.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PMZ950UPE P-channel Trench MOSFET NXP Semiconductors
PMZ1000UN N-channel TrenchMOS standard level FET NXP Semiconductors
PMZ1200UPE P-channel Trench MOSFET NXP
PMZ130UNE N-channel Trench MOSFET NXP
PMZ200UNE N-channel Trench MOSFET NXP

Other Datasheets by Nexperia

Part Number Description
PMZ950UPEL P-channel MOSFET
PMZ1200UPE P-channel MOSFET
PMZ130UNE N-channel MOSFET
PMZ200UNE N-channel MOSFET
PMZ290UNE N-channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PMZ950UPE 20 V, P-channel Trench MOSFET 10 July 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Leadless ultra small and ultra thin SMD plastic package: 1.0 × 0.6 × 0.48 mm • ElectroStatic Discharge (ESD) protection > 1 kV HBM • Drain-source on-state resistance RDSon = 1.02 Ω 3. Applications • Relay driver • High-speed line driver • High-side load switch • Switching circuits 4. Quick reference data Table 1.
Published: |