PMV60ENEA datasheet, mosfet equivalent, nexperia

Features and benefits

* Logic-level compatible
* Extended temperature range Tj = 175 °C
* Trench MOSFET technology
* ElectroStatic Discharge (ESD) protection > 1.5 kV HBM (clas.

Application

* Relay driver
* High-speed line driver
* Low-side load switch
* Switching circuits 4. Quick reference .

Description

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits
* Logic-level compatible
* Extended temperature range .

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