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PMV48XP - P-channel MOSFET

General Description

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Key Features

  • Logic-level compatible.
  • Trench MOSFET technology.
  • Very fast switching 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PMV48XP 20 V, 3.5 A P-channel Trench MOSFET Rev. 1 — 21 December 2010 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits „ Logic-level compatible „ Trench MOSFET technology „ Very fast switching 1.3 Applications „ High-side loadswitch „ High-speed line driver „ Relay driver „ Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source Tamb = 25 °C voltage - - -20 V VGS gate-source voltage -12 - 12 V ID drain current Static characteristics RDSon drain-source on-state resistance VGS = -4.