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PMV42ENE - N-channel MOSFET

General Description

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Key Features

  • Logic level compatible.
  • Low on-state resistance.
  • Trench MOSFET technology.
  • ElectroStatic Discharge (ESD) protection > 1 kV HBM.
  • Enhanced power dissipation capability of 1 W 3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PMV42ENE 30 V, N-channel Trench MOSFET 16 March 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic level compatible • Low on-state resistance • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 1 kV HBM • Enhanced power dissipation capability of 1 W 3. Applications • Relay driver • High-speed line driver • Low-side loadswitch • Switching circuits 4. Quick reference data Table 1.