PMV28ENE - N-channel MOSFET

Nexperia

Description

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features

Logic-level compatible.
Extended temperature range Tj = 175 °C.
Trench MOSFET technology.
ElectroStatic Discharge (ESD) protection > 1.5 kV HBM (class H1C) 3.

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PMV28ENE n-channel mosfet by Nexperia - Datasheet Preview

Datasheet Details

Part number	PMV28ENE
Manufacturer	Nexperia
File Size	260.38 KB
Description	N-channel MOSFET
Datasheet	PMV28ENE Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PMV28ENE 30 V, N-channel Trench MOSFET 29 November 2021 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Extended temperature range Tj = 175 °C • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 1.5 kV HBM (class H1C) 3. Applications • Relay driver • High-speed line driver • Low-side load switch • Switching circuits 4. Quick reference data Table 1.