* Trench MOSFET technology
* Low threshold voltage
* Very fast switching
* Enhanced power dissipation capability: Ptot = 980 mW
* ElectroStatic Discha.

* LED driver
* Power management
* High-side loadswitch
* Switching circuits 4. Quick reference data Ta.

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits
* Trench MOSFET technology
* Low threshold voltage

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