Datasheet4U Logo Datasheet4U.com

PMV25ENEA - N-channel MOSFET

General Description

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Key Features

  • Low threshold voltage.
  • Very fast switching.
  • Trench MOSFET technology.
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM.
  • AEC-Q101 qualified 3.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PMV250EPEA P-channel Trench MOSFET NXP
PMV20XN N-channel Trench MOSFET NXP Semiconductors
PMV213SN uTrenchMOS standard level FET NXP
PMV22EN N-channel Trench MOSFET NXP Semiconductors
PMV28UN N-channel Trench MOSFET NXP Semiconductors

Other Datasheets by Nexperia

Part Number Description
PMV250EPEA P-channel MOSFET
PMV20EN N-Channel MOSFET
PMV20XNE N-channel MOSFET
PMV20XNEA N-channel MOSFET
PMV213SN N-channel FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SOT23 PMV25ENEA 30 V, N-channel Trench MOSFET 26 February 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Very fast switching • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM • AEC-Q101 qualified 3. Applications • Relay driver • High-speed line driver • Low-side loadswitch • Switching circuits 4. Quick reference data Table 1.