PMN48XPA
description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
- Logic-level patible
- Trench MOSFET technology
- Very fast switching
- AEC-Q101 qualified
3. Applications
- Relay driver
- High-speed line driver
- High-side load switch
- Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max
VDS drain-source voltage Tj = 25 °C
VGS gate-source voltage
ID drain current
VGS = -4.5 V; Tamb = 25 °C
--
-12
- [1]
- -
-20 12 -4.1
Static characteristics
RDSon drain-source on-state VGS = -4.5 V; ID = -2.4 A; Tj = 25 °C resistance
- 48 55
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm2.
Unit V V A mΩ
Nexperia
20 V, P-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information Pin Symbol...
