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nexperia

PMN48XPA Datasheet Preview

PMN48XPA Datasheet

P-channel MOSFET

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PMN48XPA
20 V, P-channel Trench MOSFET
17 May 2019
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-
Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
Logic-level compatible
Trench MOSFET technology
Very fast switching
AEC-Q101 qualified
3. Applications
Relay driver
High-speed line driver
High-side load switch
Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max
VDS drain-source voltage Tj = 25 °C
VGS gate-source voltage
ID
drain current
VGS = -4.5 V; Tamb = 25 °C
--
-12 -
[1] -
-
-20
12
-4.1
Static characteristics
RDSon
drain-source on-state VGS = -4.5 V; ID = -2.4 A; Tj = 25 °C
resistance
- 48 55
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm2.
Unit
V
V
A




nexperia

PMN48XPA Datasheet Preview

PMN48XPA Datasheet

P-channel MOSFET

No Preview Available !

Nexperia
PMN48XPA
20 V, P-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 D drain
2 D drain
3 G gate
4 S source
5 D drain
6 D drain
Simplified outline
654
123
TSOP6 (SOT457)
Graphic symbol
D
G
S
017aaa257
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMN48XPA
TSOP6
Description
plastic surface-mounted package (TSOP6); 6 leads
Version
SOT457
7. Marking
Table 4. Marking codes
Type number
PMN48XPA
Marking code
BA
PMN48XPA
Product data sheet
All information provided in this document is subject to legal disclaimers.
17 May 2019
© Nexperia B.V. 2019. All rights reserved
2 / 14


Part Number PMN48XPA
Description P-channel MOSFET
Maker nexperia
Total Page 14 Pages
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