PMN30XPE datasheet, mosfet equivalent, nexperia

Features and benefits

* Very fast switching
* Trench MOSFET technology
* ElectroStatic Discharge (ESD) protection > 2 kV HBM
* Enhanced power dissipation capability of 1390 mW .

Application

* Relay driver
* High-speed line driver
* High-side load switch
* Switching circuits 4. Quick reference.

Description

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) SurfaceMounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits
* Very fast switching
* Trench MOSFET technology
* El.

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