PMN30UNE datasheet, mosfet equivalent, nexperia

Features and benefits

* Trench MOSFET technology
* Low threshold voltage
* Very fast switching
* Enhanced power dissipation capability of 1240 mW
* ElectroStatic Discharge .

Application

* LED driver
* Power management
* Low-side loadswitch
* Switching circuits 4. Quick reference data Tab.

Description

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits
* Trench MOSFET technology
* Low threshold voltage
*.

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