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PMDXB600UNEL - dual N-channel MOSFET

General Description

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Key Features

  • Low leakage current.
  • Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm.
  • Exposed drain pad for excellent thermal conduction.
  • ElectroStatic Discharge (ESD) protection > 1 kV HBM.
  • Drain-source on-state resistance RDSon = 470 mΩ 3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PMDXB600UNEL 20 V, dual N-channel Trench MOSFET 28 June 2016 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low leakage current • Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm • Exposed drain pad for excellent thermal conduction • ElectroStatic Discharge (ESD) protection > 1 kV HBM • Drain-source on-state resistance RDSon = 470 mΩ 3. Applications • Relay driver • High-speed line driver • Low-side load switch • Switching circuits 4. Quick reference data Table 1.