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PMDT670UPE - dual P-channel MOSFET

General Description

Dual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Key Features

  • Very fast switching.
  • Trench MOSFET technology.
  • ESD protection up to 2 kV.
  • AEC-Q101 qualified 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PMDT670UPE 20 V, 550 mA dual P-channel Trench MOSFET Rev. 1 — 13 September 2011 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Very fast switching  Trench MOSFET technology  ESD protection up to 2 kV  AEC-Q101 qualified 1.3 Applications  Relay driver  High-speed line driver  High-side loadswitch  Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Per transistor VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics (per transistor) Tj = 25 °C VGS = -4.