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SO T6
PMDT290UCE
20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET
Rev. 1 — 6 October 2011 Product data sheet
1. Product profile
1.1 General description
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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1.2 Features and benefits
Very fast switching Trench MOSFET technology ESD protection up to 2 kV AEC-Q101 qualified
1.3 Applications
Relay driver High-speed line driver Low-side loadswitch Switching circuits
1.4 Quick reference data
Table 1.
PMDT290UCE Datasheet
