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PMDT290UNE - dual N-channel MOSFET

General Description

Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Key Features

  • Very fast switching.
  • Trench MOSFET technology.
  • ESD protection up to 2 kV 3.

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Full PDF Text Transcription (Reference)

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PMDT290UNE 20 V, 800 mA dual N-channel Trench MOSFET 28 December 2022 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Very fast switching • Trench MOSFET technology • ESD protection up to 2 kV 3. Applications • Relay driver • High-speed line driver • Low-side loadswitch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Per transistor VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain current VGS = 4.5 V; Tamb = 25 °C [1] Static characteristics (per transistor) RDSon drain-source on-state VGS = 4.