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PMDT290UCE
20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET
Rev. 1 — 6 October 2011
Product data sheet
1. Product profile
1.1 General description
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
Very fast switching Trench MOSFET technology
ESD protection up to 2 kV AEC-Q101 qualified
1.3 Applications
Relay driver High-speed line driver
Low-side loadswitch Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
TR1 (N-channel), Static characteristics
RDSon
drain-source on-state VGS = 4.
PMDT290UCE Datasheet
