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PMDT290UCE Datasheet Preview

PMDT290UCE Datasheet

N/P-channel MOSFET

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PMDT290UCE
20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET
Rev. 1 — 6 October 2011
Product data sheet
1. Product profile
1.1 General description
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra
small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
1.2 Features and benefits
Very fast switching
Trench MOSFET technology
ESD protection up to 2 kV
AEC-Q101 qualified
1.3 Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
TR1 (N-channel), Static characteristics
RDSon
drain-source on-state VGS = 4.5 V; ID = 500 mA; Tj = 25 °C
resistance
TR2 (P-channel), Static characteristics
RDSon
drain-source on-state VGS = -4.5 V; ID = -400 mA; Tj = 25 °C
resistance
TR1 (N-channel)
VDS drain-source voltage
VGS gate-source voltage
ID drain current
TR2 (P-channel)
Tj = 25 °C
VGS = 4.5 V; Tamb = 25 °C
VDS drain-source voltage Tj = 25 °C
VGS gate-source voltage
ID
drain current
VGS = -4.5 V; Tamb = 25 °C
[1]
[1]
Min
-
-
-
-8
-
-
-8
-
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2.
Typ Max Unit
290 380 m
0.67 0.85
- 20 V
- 8V
- 800 mA
- -20 V
- 8V
- -550 mA




nexperia

PMDT290UCE Datasheet Preview

PMDT290UCE Datasheet

N/P-channel MOSFET

No Preview Available !

Nexperia
PMDT290UCE
20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Pinning information
Symbol Description
S1 source TR1
G1 gate TR1
D2 drain TR2
S2 source TR2
G2 gate TR2
D1 drain TR1
Simplified outline
654
123
SOT666
Graphic symbol
D1
D2
G1
G2
S1 S2
017aaa262
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMDT290UCE
-
4. Marking
Description
plastic surface-mounted package; 6 leads
Table 4. Marking codes
Type number
PMDT290UCE
5. Limiting values
Marking code
AF
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
TR1 (N-channel)
VDS drain-source voltage Tj = 25 °C
VGS gate-source voltage
ID drain current
VGS = 4.5 V; Tamb = 25 °C
VGS = 4.5 V; Tamb = 100 °C
IDM peak drain current
Tamb = 25 °C; single pulse; tp 10 µs
Ptot
total power dissipation
Tamb = 25 °C
TR1 (N-channel), Source-drain diode
IS source current
TR1 N-channel), ESD maximum rating
VESD
electrostatic discharge voltage
Tsp = 25 °C
Tamb = 25 °C
HBM
PMDT290UCE
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 6 October 2011
[1]
[1]
[2]
[1]
[1]
[3]
Version
SOT666
Min Max Unit
- 20 V
-8 8
V
- 800 mA
- 500 mA
- 3.2 A
- 330 mW
- 390 mW
- 1090 mW
- 370 mA
- 2000 V
© Nexperia B.V. 2017. All rights reserved
2 of 20


Part Number PMDT290UCE
Description N/P-channel MOSFET
Maker nexperia
Total Page 20 Pages
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