PMCXB900UE datasheet, mosfet equivalent, nexperia

Avg. rating / M : 1.0 rating-1

datasheet Download (Size : 780.84KB)

Features and benefits

* Trench MOSFET technology
* Very low threshold voltage for portable applications: VGS(th) = 0.7 V
* Leadless ultra small and ultra thin SMD plastic package: .

Application

VGS(th) = 0.7 V
* Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
* ElectroStatic .

Description

Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits
* Trench MOSFET technol.

Image gallery