PMCXB900UEL
PMCXB900UEL is N/P-channel MOSFET manufactured by Nexperia.
description plementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
- Low leakage current
- Trench MOSFET technology
- Very low threshold voltage for portable applications: VGS(th) = 0.7 V
- Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
- Electro Static Discharge (ESD) protection > 1 k V HBM
3. Applications
- Relay driver
- High-speed line driver
- Level shifter
- Power management in battery-driven portables
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
TR1 (N-channel)
VDS drain-source voltage Tj = 25 °C
VGS gate-source voltage
ID drain current
VGS = 4.5 V; Tamb = 25 °C
TR2 (P-channel)
VDS drain-source voltage Tj = 25 °C
VGS gate-source voltage
TR1 (N-channel), Static characteristics
RDSon drain-source on-state VGS = 4.5 V; ID = 600 m A; Tj = 25 °C resistance
[1]
Min Typ Max Unit
--8 --
20 V 8V 600 m A
--8
- -20 V 8V
- 470 620 mΩ
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2.
Nexperia
20 V, plementary N/P-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information Pin Symbol Description
1 S1 source TR1 2 G1 gate TR1 3 D2 drain TR2 4 S2 source TR2 5 G2 gate TR2 6 D1 drain TR1 7 D1 drain TR1 8 D2 drain...
