PMCXB900UEL
description plementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
- Low leakage current
- Trench MOSFET technology
- Very low threshold voltage for portable applications: VGS(th) = 0.7 V
- Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
- Electro Static Discharge (ESD) protection > 1 k V HBM
3. Applications
- Relay driver
- High-speed line driver
- Level shifter
- Power management in battery-driven portables
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
TR1 (N-channel)
VDS drain-source voltage Tj = 25 °C
VGS gate-source voltage
ID drain current
VGS = 4.5 V; Tamb = 25 °C
TR2 (P-channel)
VDS drain-source voltage Tj = 25 °C
VGS gate-source voltage
TR1 (N-channel), Static characteristics
RDSon drain-source on-state VGS = 4.5 V; ID = 600 m A; Tj =...
