PMCXB900UEL mosfet equivalent, n/p-channel mosfet.
* Low leakage current
* Trench MOSFET technology
* Very low threshold voltage for portable applications: VGS(th) = 0.7 V
* Leadless ultra small and ultra .
VGS(th) = 0.7 V
* Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
* ElectroStatic .
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
* Low leakage current <.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 795.26KB)