PMCM950ENE datasheet, mosfet equivalent, nexperia

Features and benefits

* Low threshold voltage
* Ultra small package: 1.48 × 1.48 × 0.35 mm
* Trench MOSFET technology
* ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. .

Application

* High-speed line driver
* Low-side load switch
* Switching circuits 4. Quick reference data Table 1. Quic.

Description

N-channel enhancement mode Field-Effect Transistor (FET) in a 9 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 2. Features and benefits
* Low threshold voltage
* Ultra small package: 1.48 × 1.48 × 0.35 mm
* T.

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