* Low threshold voltage
* Ultra small package: 0.78 x 0.78 x 0.35 mm
* Trench MOSFET technology
* ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. .

* Battery switch
* High-speed line driver
* Low-side loadswitch
* Switching circuits 4. Quick reference.

N-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 2. Features and benefits
* Low threshold voltage
* Ultra small package: 0.78 x 0.78 x 0.35 mm
* T.

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