PMCM6501VPE datasheet, mosfet equivalent, nexperia

Features and benefits

* Low threshold voltage
* Ultra small package: 0.98 × 1.48 × 0.35 mm
* Trench MOSFET technology
* ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. .

Application

* Battery switch
* High-speed line driver
* Low-side loadswitch
* Switching circuits 4. Quick reference.

Description

P-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 2. Features and benefits
* Low threshold voltage
* Ultra small package: 0.98 × 1.48 × 0.35 mm
* T.

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