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PMCM650CUNE - Common Drain N-channel Trench MOSFET

Description

N-channel enhancement mode common-drain dual Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.

Features

  • Common-drain type for bi-directional current flow.
  • Low threshold voltage.
  • Ultra small package: 0.98 × 1.48 × 0.35 mm.
  • Trench MOSFET technology.
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM 1.3.

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Datasheet Details

Part number PMCM650CUNE
Manufacturer nexperia
File Size 393.68 KB
Description Common Drain N-channel Trench MOSFET
Datasheet download datasheet PMCM650CUNE Datasheet

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Full PDF Text Transcription

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PMCM650CUNE 20 V, Common Drain N-channel Trench MOSFET Rev. 1.0 — 8 November 2017 Product data sheet WLCSP6 1 Product profile 1.1 General description N-channel enhancement mode common-drain dual Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 1.2 Features and benefits • Common-drain type for bi-directional current flow • Low threshold voltage • Ultra small package: 0.98 × 1.48 × 0.35 mm • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM 1.3 Applications • Loadswitch • Battery Protection • Battery Management 1.4 Quick reference data Table 1.
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