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PHPT61010PY - PNP Transistor

Description

PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.

NPN complement: PHPT61010NY.

2.

Features

  • High thermal power dissipation capability.
  • Suitable for high temperature.

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Datasheet preview – PHPT61010PY

Datasheet Details

Part number PHPT61010PY
Manufacturer nexperia
File Size 707.74 KB
Description PNP Transistor
Datasheet download datasheet PHPT61010PY Datasheet
Additional preview pages of the PHPT61010PY datasheet.

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Full PDF Text Transcription

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PHPT61010PY 100 V, 10 A PNP high power bipolar transistor 20 March 2015 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61010NY. 2. Features and benefits • High thermal power dissipation capability • Suitable for high temperature applications up to 175 °C • Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK • High energy efficiency due to less heat generation • AEC-Q101 qualified 3. Applications • Power management • Load switch • Linear mode voltage regulator • Backlighting applications • Motor drive • Relay replacement 4. Quick reference data Table 1.
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