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nexperia

PHPT61010PY Datasheet Preview

PHPT61010PY Datasheet

PNP Transistor

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PHPT61010PY
100 V, 10 A PNP high power bipolar transistor
20 March 2015
Product data sheet
1. General description
PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device
(SMD) power plastic package.
NPN complement: PHPT61010NY.
2. Features and benefits
High thermal power dissipation capability
Suitable for high temperature applications up to 175 °C
Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK
High energy efficiency due to less heat generation
AEC-Q101 qualified
3. Applications
Power management
Load switch
Linear mode voltage regulator
Backlighting applications
Motor drive
Relay replacement
4. Quick reference data
Table 1.
Symbol
VCEO
IC
ICM
RCEsat
Quick reference data
Parameter
Conditions
collector-emitter
voltage
open base
collector current
peak collector current tp ≤ 1 ms; single pulse
collector-emitter
saturation resistance
IC = -10 A; IB = -1 A; tp ≤ 300 µs;
δ ≤ 0.02; Tamb = 25 °C; pulsed
Min Typ Max Unit
- - -100 V
- - -10 A
- - -20 A
- 53 80 mΩ




nexperia

PHPT61010PY Datasheet Preview

PHPT61010PY Datasheet

PNP Transistor

No Preview Available !

Nexperia
PHPT61010PY
100 V, 10 A PNP high power bipolar transistor
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 E emitter
2 E emitter
3 E emitter
4 B base
mb C
collector
Simplified outline
mb
1234
LFPAK56; Power-
SO8 (SOT669)
Graphic symbol
C
B
E
sym132
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PHPT61010PY
LFPAK56;
Power-SO8
Description
Plastic single-ended surface-mounted package (LFPAK56;
Power-SO8); 4 leads
Version
SOT669
7. Marking
Table 4. Marking codes
Type number
PHPT61010PY
Marking code
1010PAB
PHPT61010PY
Product data sheet
All information provided in this document is subject to legal disclaimers.
20 March 2015
© Nexperia B.V. 2017. All rights reserved
2 / 16


Part Number PHPT61010PY
Description PNP Transistor
Maker nexperia
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