PHPT61006PY
description
PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.
NPN plement: PHPT61006NY
2. Features and benefits
- High thermal power dissipation capability
- High temperature applications up to 175 °C
- Reduced Printed Circuit Board (PCB) requirements paring to transistors in DPAK
- High energy efficiency due to less heat generation
- AEC-Q101 qualified.
3. Applications
- Power management
- Load switch
- Linear mode voltage regulator
- Backlighting applications
- Motor drive
- Relay replacement
4. Quick reference data
Table 1. Symbol VCEO
IC ICM RCEsat
Quick reference data Parameter
Conditions collector-emitter voltage open base collector current peak collector current tp ≤ 1 ms; single pulse collector-emitter saturation resistance
IC = -6 A; IB = -600 m A; tp ≤ 300 µs; δ ≤...
