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PHPT61006NY Datasheet Preview

PHPT61006NY Datasheet

NPN Transistor

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PHPT61006NY
100 V, 6 A NPN high power bipolar transistor
26 January 2015
Product data sheet
1. General description
NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted
Device (SMD) power plastic package.
PNP complement: PHPT61006PY
2. Features and benefits
High thermal power dissipation capability
High temperature applications up to 175 °C
Reduced Printed Circuit Board (PCB) requirements comparing to transistors in DPAK
High energy efficiency due to less heat generation
AEC-Q101 qualified.
3. Applications
Power management
Load switch
Linear mode voltage regulator
Backlighting applications
Motor drive
Relay replacement
4. Quick reference data
Table 1.
Symbol
VCEO
IC
ICM
RCEsat
Quick reference data
Parameter
Conditions
collector-emitter
voltage
open base
collector current
peak collector current single pulse; tp ≤ 1 ms
collector-emitter
saturation resistance
IC = 6 A; IB = 600 mA; tp ≤ 300 µs;
δ ≤ 0.02; Tamb = 25 °C; pulsed
Min Typ Max Unit
- - 100 V
- - 6A
- - 12 A
- 35 57 mΩ




nexperia

PHPT61006NY Datasheet Preview

PHPT61006NY Datasheet

NPN Transistor

No Preview Available !

Nexperia
PHPT61006NY
100 V, 6 A NPN high power bipolar transistor
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 E emitter
2 E emitter
3 E emitter
4 B base
mb C
collector
Simplified outline
mb
1234
LFPAK56; Power-
SO8 (SOT669)
Graphic symbol
C
B
E
sym123
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PHPT61006NY
LFPAK56;
Power-SO8
Description
Plastic single-ended surface-mounted package (LFPAK56;
Power-SO8); 4 leads
Version
SOT669
7. Marking
Table 4. Marking codes
Type number
PHPT61006NY
Marking code
1006NAB
PHPT61006NY
Product data sheet
All information provided in this document is subject to legal disclaimers.
26 January 2015
© Nexperia B.V. 2017. All rights reserved
2 / 15


Part Number PHPT61006NY
Description NPN Transistor
Maker nexperia
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