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PHPT61003PY Datasheet Preview

PHPT61003PY Datasheet

PNP Transistor

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PHPT61003PY
100 V, 3A PNP high power bipolar transistor
13 January 2014
Product data sheet
1. General description
PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device
(SMD) power plastic package.
NPN complement: PHPT61003NY
2. Features and benefits
High thermal power dissipation capability
Suitable for high temperature applications up to 175 °C
Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK
High energy efficiency due to less heat generation
AEC-Q101 qualified
3. Applications
Power management
Loadswitch
Linear mode voltage regulator
Backlighting applications
4. Quick reference data
Table 1.
Symbol
VCEO
IC
ICM
RCEsat
Quick reference data
Parameter
Conditions
collector-emitter
voltage
open base
collector current
peak collector current tp ≤ 1 ms; single pulse
collector-emitter
saturation resistance
IC = -2 A; IB = -200 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
Min Typ Max Unit
- - -100 V
- - -3 A
- - -8 A
- 110 180 mΩ




nexperia

PHPT61003PY Datasheet Preview

PHPT61003PY Datasheet

PNP Transistor

No Preview Available !

Nexperia
PHPT61003PY
100 V, 3A PNP high power bipolar transistor
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 E emitter
2 E emitter
3 E emitter
4 B base
mb C
collector
Simplified outline
mb
1234
LFPAK56; Power-
SO8 (SOT669)
Graphic symbol
C
B
E
sym132
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PHPT61003PY
LFPAK56;
Power-SO8
Description
Plastic single-ended surface-mounted package (LFPAK56;
Power-SO8); 4 leads
Version
SOT669
7. Marking
Table 4. Marking codes
Type number
PHPT61003PY
Marking code
1003PAB
PHPT61003PY
Product data sheet
All information provided in this document is subject to legal disclaimers.
13 January 2014
© Nexperia B.V. 2017. All rights reserved
2 / 15


Part Number PHPT61003PY
Description PNP Transistor
Maker nexperia
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