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PHPT61003NY - NPN Transistor

General Description

NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.

2.

Key Features

  • High thermal power dissipation capability.
  • Suitable for high temperature.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PHPT61003NY 100 V, 3 A NPN high power bipolar transistor 11 September 2015 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61003PY 2. Features and benefits • High thermal power dissipation capability • Suitable for high temperature applications up to 175 °C • Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK • High energy efficiency due to less heat generation • AEC-Q101 qualified 3. Applications • Power management • Loadswitch • Linear mode voltage regulator • Backlighting applications 4. Quick reference data Table 1.