PHPT610035NK datasheet, transistor equivalent, nexperia

Features and benefits

* Current gain matching 5%
* High thermal power dissipation capability
* Suitable for high temperature applications up to 175 °C
* Reduced Printed-Circuit.

Application

up to 175 °C
* Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK
* High energy e.

Description

NPN/NPN high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted Device (SMD) power plastic package. Matched version of PHPT610030NK. PNP/PNP complement: PHPT610035PK NPN/PNP complement: PHPT610035NPK 2. Features and benefits

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