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PHPT61002PYC - PNP Transistor

Description

PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.

NPN complement: PHPT61002NYC.

2.

Features

  • High thermal power dissipation capability.
  • Suitable for high temperature.

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Datasheet preview – PHPT61002PYC

Datasheet Details

Part number PHPT61002PYC
Manufacturer nexperia
File Size 704.83 KB
Description PNP Transistor
Datasheet download datasheet PHPT61002PYC Datasheet
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Full PDF Text Transcription

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PHPT61002PYC 100 V, 2 A PNP high power bipolar transistor 10 January 2014 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61002NYC. 2. Features and benefits • High thermal power dissipation capability • Suitable for high temperature applications up to 175 °C • Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK • High energy efficiency due to less heat generation 3. Applications • Power management • Load switch • Linear mode voltage regulator • Backlighting applications 4. Quick reference data Table 1.
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