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PHPT61002NYCLH Datasheet Preview

PHPT61002NYCLH Datasheet

NPN transistor

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PHPT61002NYCLH
100 V, 2 A NPN high power bipolar transistor
31 March 2017
Product data sheet
1. General description
NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power
plastic package.
PNP complement: PHPT61002PYCLH
2. Features and benefits
High thermal power dissipation capability
High temperature applications up to 175 °C
Reduced Printed Circuit Board (PCB) requirements comparing to transistors in DPAK
High energy efficiency due to less heat generation
3. Applications
Load switch
Power management
Linear mode voltage regulator
Backlighting apllications
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VCEO
collector-emitter
voltage
open base
- - 100 V
IC
ICM
RCEsat
collector current
-
peak collector current single pulse; tp ≤ 1 ms
-
collector-emitter
IC = 2 A; IB = 200 mA; Tamb = 25 °C [1] -
saturation resistance
- 2A
- 6A
80 150 mΩ
[1] pulsed; tp ≤ 300 µs; δ ≤ 0.02




nexperia

PHPT61002NYCLH Datasheet Preview

PHPT61002NYCLH Datasheet

NPN transistor

No Preview Available !

Nexperia
PHPT61002NYCLH
100 V, 2 A NPN high power bipolar transistor
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 E emitter
2 E emitter
3 E emitter
4 B base
mb C
collector
Simplified outline
mb
1234
LFPAK56; Power-
SO8 (SOT669)
Graphic symbol
C
B
E
sym123
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PHPT61002NYCLH
LFPAK56;
Power-SO8
Description
Plastic single-ended surface-mounted package (LFPAK56;
Power-SO8); 4 leads
Version
SOT669
7. Marking
Table 4. Marking codes
Type number
PHPT61002NYCLH
Marking code
1002NCC
PHPT61002NYCLH
Product data sheet
All information provided in this document is subject to legal disclaimers.
31 March 2017
© Nexperia B.V. 2017. All rights reserved
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Part Number PHPT61002NYCLH
Description NPN transistor
Maker nexperia
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