PHPT60603PY Datasheet Text
PHPT60603PY
60 V, 3 A PNP high power bipolar transistor
13 January 2014
Product data sheet
1. General description
PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.
NPN plement: PHPT60603NY.
2. Features and benefits
- High thermal power dissipation capability
- Suitable for high temperature applications up to 175 °C
- Reduced Printed-Circuit Board (PCB) requirements paring to transistors in DPAK
- High energy efficiency due to less heat generation
- AEC-Q101 qualified
3. Applications
- Power management
- Load switch
- Linear mode voltage regulator
- Backlighting applications
4. Quick reference data
Table 1. Symbol VCEO
IC ICM RCEsat
Quick reference data Parameter
Conditions collector-emitter voltage open base collector current peak collector current tp ≤ 1 ms; pulsed collector-emitter saturation resistance
IC = -3 A; IB = -300 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
Min...