PHB45NQ10T datasheet, mosfet equivalent, nexperia

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datasheet Download (Size : 860.30KB)

Features and benefits

* Higher operating power due to low thermal resistance
* Low conduction losses due to low on-state resistance
* Suitable for high frequency applications due .

Application

only. 1.2 Features and benefits
* Higher operating power due to low thermal resistance
* Low conduction losses .

Description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Feat.

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