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PHB45NQ10T - N-channel TrenchMOS transistor

Description

N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology.

d.c.

to d.c.

switched mode power supplies The PHP45NQ10T is supplied in the SOT78 (TO220AB) conventional leaded package.

Features

  • ’Trench’ technology.
  • Very low on-state resistance.
  • Fast switching.
  • Low thermal resistance SYMBOL VDSS = 100 V ID = 47 A g RDS(ON) ≤ 25 mΩ s.

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Full PDF Text Transcription

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Philips Semiconductors Product specification N-channel TrenchMOS™ transistor PHB45NQ10T, PHP45NQ10T PHW45NQ10T QUICK REFERENCE DATA d FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance SYMBOL VDSS = 100 V ID = 47 A g RDS(ON) ≤ 25 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. Applications:• d.c. to d.c. converters • switched mode power supplies The PHP45NQ10T is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB45NQ10T is supplied in the SOT404 (D2PAK) surface mounting package. The PHW45NQ10T is supplied in the SOT429 (TO247) conventional leaded package.
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