PHB20N06T mosfet equivalent, n-channel mosfet.
* Low conduction losses due to low on-state resistance
* Suitable for high frequency applications due to fast switching characteristics
1.3 Applications
* D.
only.
1.2 Features and benefits
* Low conduction losses due to low on-state resistance
* Suitable for high fre.
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
1.2 Feat.
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