PBSS5255PAPS datasheet, transistor equivalent, nexperia

Avg. rating / M : 1.0 rating-1

datasheet Download (Size : 963.11KB)

Features and benefits

* Very low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High collector current gain hFE at high IC
* Reduc.

Application

* Load switch
* Battery-driven devices
* Power management
* Charging circuits
* LED lighting
* P.

Description

PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. 2. Features and benefits
* Very low col.

Image gallery