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PBSS5160PAPS Datasheet Preview

PBSS5160PAPS Datasheet

PNP/PNP Transistor

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PBSS5160PAPS
60 V, 1 A PNP/PNP low VCEsat (BISS) transistor
24 November 2014
Product data sheet
1. General description
PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless
medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic
package with visible and solderable side pads.
2. Features and benefits
Very low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain hFE at high IC
Reduced Printed-Circuit Board (PCB) requirements
Exposed heat sink for excellent thermal and electrical conductivity
High energy efficiency due to less heat generation
Suitable for Automatic Optical Inspection (AOI) of solder joints
AEC-Q101 qualified
3. Applications
Load switch
Battery-driven devices
Power management
Charging circuits
LED lighting
Power switches (e.g. motors, fans)
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Per transistor
VCEO
collector-emitter
voltage
IC collector current
ICM peak collector current
Per transistor
RCEsat
collector-emitter
saturation resistance
Conditions
open base
single pulse; tp ≤ 1 ms
IC = -0.5 A; IB = -50 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
Min Typ Max Unit
- - -60 V
- - -1 A
- - -1.5 A
- - 360 mΩ




nexperia

PBSS5160PAPS Datasheet Preview

PBSS5160PAPS Datasheet

PNP/PNP Transistor

No Preview Available !

Nexperia
PBSS5160PAPS
60 V, 1 A PNP/PNP low VCEsat (BISS) transistor
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 E1 emitter TR1
2 B1 base TR1
3 C2 collector TR2
4 E2 emitter TR2
5 B2 base TR2
6 C1 collector TR1
7 C1 collector TR1
8 C2 collector TR2
Simplified outline
654
Graphic symbol
C1 B2 E2
78
TR2
TR1
123
Transparent top view
DFN2020D-6 (SOT1118D)
E1 B1 C2
sym138
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PBSS5160PAPS
DFN2020D-6
Description
DFN2020D-6: plastic, thermally enhanced ultra thin and small
outline package; no leads; 6 terminals; body 2 x 2 x 0.65 mm
Version
SOT1118D
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Per transistor
VCBO
collector-base voltage
open emitter
VCEO
collector-emitter voltage
open base
VEBO
emitter-base voltage
open collector
IC collector current
ICM
peak collector current
single pulse; tp ≤ 1 ms
IB base current
IBM peak base current
single pulse; tp ≤ 1 ms
Ptot
total power dissipation
Tamb ≤ 25 °C
PBSS5160PAPS
Product data sheet
All information provided in this document is subject to legal disclaimers.
24 November 2014
Min Max Unit
-
-
-
-
-
-
-
[1] -
[2] -
[3] -
[4] -
-60 V
-60 V
-7 V
-1 A
-1.5 A
-0.3 A
-1 A
370 mW
570 mW
530 mW
700 mW
© Nexperia B.V. 2017. All rights reserved
2 / 19


Part Number PBSS5160PAPS
Description PNP/PNP Transistor
Maker nexperia
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