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PBSS5160PAP - 1A PNP/PNP low VCEsat (BISS) transistor

Datasheet Summary

Description

PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

NPN/PNP complement: PBSS4160PANP.

NPN/NPN complement: PBSS4160PAN.

Features

  • Very low collector-emitter saturation voltage VCEsat.
  • High collector current capability IC and ICM.
  • High collector current gain hFE at high IC.
  • Reduced Printed-Circuit Board (PCB) requirements.
  • High energy efficiency due to less heat generation.
  • AEC-Q101 qualified 3.

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Datasheet Details

Part number PBSS5160PAP
Manufacturer nexperia
File Size 739.55 KB
Description 1A PNP/PNP low VCEsat (BISS) transistor
Datasheet download datasheet PBSS5160PAP Datasheet
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PBSS5160PAP 60 V, 1 A PNP/PNP low VCEsat (BISS) transistor 23 January 2013 Product data sheet 1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4160PANP. NPN/NPN complement: PBSS4160PAN. 2. Features and benefits • Very low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain hFE at high IC • Reduced Printed-Circuit Board (PCB) requirements • High energy efficiency due to less heat generation • AEC-Q101 qualified 3. Applications • Load switch • Battery-driven devices • Power management • Charging circuits • Power switches (e.g. motors, fans) 4.
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