PBSS5160PAP transistor equivalent, 1a pnp/pnp low vcesat (biss) transistor.
* Very low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High collector current gain hFE at high IC
* Reduc.
* Load switch
* Battery-driven devices
* Power management
* Charging circuits
* Power switches (e.g..
PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
NPN/PNP complement: PBSS4160PANP. NPN/NPN complement: PBSS4160PAN.
2. Features and benefit.
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