PBSS4032PZ
PBSS4032PZ is PNP transistor manufactured by Nexperia.
description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.
NPN plement: PBSS4032NZ.
1.2 Features and benefits
- Low collector-emitter saturation voltage VCEsat
- Optimized switching time
- High collector current capability IC and ICM
- High collector current gain (h FE) at high IC
- High energy efficiency due to less heat generation
- AEC-Q101 qualified
- Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
- DC-to-DC conversion
- Battery-driven devices
- Power management
- Charging circuits
1.4 Quick reference data
Table 1. Symbol VCEO IC ICM
RCEsat
Quick reference data
Parameter
Conditions collector-emitter voltage open base collector current peak collector current collector-emitter saturation resistance single pulse; tp ≤ 1 ms
IC =
- 4 A; IB =
- 400 m A
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
Min Typ Max Unit
- -
- 30 V
- -
- 4.4 A
- -
- 10 A
[1]
- 58 86 mΩ
Nexperia
30 V, 4.4 A PNP low VCEsat (BISS) transistor
2. Pinning information
Table 2. Pin 1 2 3 4
Pinning Description base collector emitter...
