PBSS4021NZ datasheet, transistor equivalent, nexperia

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Features and benefits

* Very low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High collector current gain (hFE) at high IC
* Hig.

Application

* Loadswitch
* Battery-driven devices
* Power management
* Charging circuits
* Power switches (e.g. .

Description

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4021PZ. 1.2 Features and benefits
* Very low collector-emitter saturation voltage VC.

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