PBSS4021NT transistor equivalent, npn transistor.
* Very low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High collector current gain (hFE) at high IC
* Hig.
* Loadswitch
* Battery-driven devices
* Power management
* Charging circuits
* Power switches (e.g. .
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS4021PT.
1.2 Features
* Very low collector-emitter saturation voltage VCEsat
* High co.
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