PBSS306NZ transistor equivalent, 5.1a npn transistor.
* Low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High collector current gain (hFE) at high IC
* High eff.
* High-voltage DC-to-DC conversion
* High-voltage MOSFET gate driving
* High-voltage motor control
* Hig.
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS306PZ.
1.2 Features
* Low collector-emitter saturation voltage VCEsat
* High collector .
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