Datasheet4U Logo Datasheet4U.com

PBSM5240PFH Datasheet PNP Transistor

Manufacturer: Nexperia

General Description

Combination of PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and N-channel Trench Metal-Oxide Semiconductor Field- Effect Transistor (MOSFET).

The device is housed in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

1.2

Overview

PBSM5240PFH 40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench MOSFET Rev.

1 — 20 June 2012 Product data sheet 1.

Product profile 1.

Key Features

  • Very low collector-emitter saturation voltage VCEsat.
  • High collector current capability IC and ICM.
  • High energy efficiency due to less heat generation.
  • Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3.