• Part: PBSM5240PFH
  • Manufacturer: Nexperia
  • Size: 1.38 MB
Download PBSM5240PFH Datasheet PDF
PBSM5240PFH datasheet preview
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PBSM5240PFH Key Features

  • Very low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High energy efficiency due to less heat generation
  • Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

Related Nexperia Datasheets

Part Number Description
PBSM5240PF PNP Transistor
PBSS2515M NPN transistor
PBSS2515MB NPN transistor
PBSS2515VS NPN double transistor
PBSS2515YPN 15V low VCEsat NPN/PNP transistor

PBSM5240PFH Description

bination of PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and N-channel Trench Metal-Oxide Semiconductor Field- Effect Transistor (MOSFET). The device is housed in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.