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PBSM5240PF Datasheet Preview

PBSM5240PF Datasheet

PNP Transistor

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PBSM5240PF
40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel
Trench MOSFET
Rev. 2 — 20 April 2011
Product data sheet
1. Product profile
1.1 General description
Combination of PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and
N-channel Trench MOSFET. The device is housed in a leadless medium power SOT1118
Surface-Mounted Device (SMD) plastic package.
1.2 Features and benefits
„ Very low collector-emitter saturation voltage VCEsat
„ High collector current capability IC and ICM
„ High collector current gain (hFE) at high IC
„ High energy efficiency due to less heat generation
„ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
„ Loadswitch
„ Power management
„ Power switches (e.g. motors, fans)
„ Battery-driven devices
„ Charging circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
PNP low VCEsat (BISS) transistor
VCEO collector-emitter voltage
IC collector current
ICRM
repetitive peak collector
current
open base
ICM
RCEsat
peak collector current
collector-emitter
saturation resistance
single pulse; tp 1 ms
IC = 500 mA;
IB = 50 mA
Min Typ Max Unit
-
[1] -
[1][5] -
[1] -
[2] -
- 40 V
1.8 A
- 2 A
- 3 A
240 340 mΩ




nexperia

PBSM5240PF Datasheet Preview

PBSM5240PF Datasheet

PNP Transistor

No Preview Available !

Nexperia
PBSM5240PF
40 V, 2 A PNP BISS/Trench MOSFET module
Table 1. Quick reference data …continued
Symbol Parameter
Conditions
N-channel Trench MOSFET
VDS drain-source voltage
VGS gate-source voltage
ID drain current
RDSon drain-source on-state
resistance
Tamb = 25 °C
Tamb = 25 °C
Tamb = 25 °C;
VGS = 10 V
Tj = 25 °C; VGS = 4.5 V;
ID = 0.2 A
Min Typ Max Unit
- - 30 V
- - ±8 V
[3] - - 0.66 A
[4] - 370 580 mΩ
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[2] Pulse test: tp 300 μs; δ ≤ 0.02.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
[4] Pulse test: tp 300 μs; δ ≤ 0.01.
[5] Pulse test: tp 20 ms; δ ≤ 0.10.
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
7
8
Pinning
Description
emitter
base
drain
source
gate
collector
collector
drain
Simplified outline
654
Graphic symbol
6, 7 5 4
78
123
Transparent top view
1 2 3, 8
017aaa079
3. Ordering information
Table 3. Ordering information
Type number Package
Name
Description
Version
PBSM5240PF
HUSON6 plastic thermal enhanced ultra thin small outline
SOT1118
package; no leads; 6 terminals; body 2 × 2 × 0.65 mm
4. Marking
Table 4. Marking codes
Type number
PBSM5240PF
Marking code
1G
PBSM5240PF
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 20 April 2011
© Nexperia B.V. 2017. All rights reserved
2 of 20


Part Number PBSM5240PF
Description PNP Transistor
Maker nexperia
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