PBSM5240PF datasheet, transistor equivalent, nexperia

Avg. rating / M : 1.0 rating-1

datasheet Download (Size : 1.34MB)

Features and benefits

* Very low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High collector current gain (hFE) at high IC
* Hig.

Application

* Loadswitch
* Power management
* Power switches (e.g. motors, fans)
* Battery-driven devices
* Cha.

Description

Combination of PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and N-channel Trench MOSFET. The device is housed in a leadless medium power SOT1118 Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits
* Very low .

Image gallery