PB5350 datasheet, transistor equivalent, nexperia

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Features and benefits

* Low collector-emitter saturation voltage VCEsat
* High collector current capability: IC and ICM
* High collector current gain (hFE) at high IC
* High en.

Application

* DC/DC converters
* Supply line switching
* Battery charger
* LED backlighting
* Linear voltage reg.

Description

PNP low VCEsat transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4350Z 2. Features and benefits
* Low collector-emitter saturation voltage VCEsat
* High collector current capability.

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